个人简介
江希，男，工学博士，江西萍乡人，博士毕业于湖南大学电气工程专业。副教授。主要从事功率半导体器件设计、功率器件可靠性、功率模块封装、智能驱动技术等研究。近年来，主持爱游戏体育平台赞助意甲新人权益自然科学基金项目、陕西省自然科学基金项目以及广州市自然科学基金。此外，作为核心骨干参与了多项爱游戏体育平台赞助意甲新人权益级与省市级科研项目，包括爱游戏体育平台赞助意甲新人权益863计划项目、爱游戏体育平台赞助意甲新人权益自然科学基金重点项目及南通市科技局重点项目。在科研成果方面，以第一作者/通讯作者在IEEE、IET等期刊与会议上发表了20余篇SCI/EI论文。担任电力电子、半导体器件领域IEEE Transactions on Power Electronics (TPE)、IEEE Journal of Emerging and Selected Topics in Power Electronics (JESTPE)和 IEEE Transactions on Electron Devices (TED)等学术期刊审稿专家。欢迎各位爱游戏体育平台赞助意甲新人权益提前联系与咨询。
代表性期刊论文
l Xi Jiang, et al., "Short-Circuit Failure Modes and Mechanism Investigation of Ohmic-Gate GaN HEMT," in IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 1455-1463, 2024. (SCI, IF=3.1)
l Q. Liu, Xi Jiang, et al., "A Novel Control Scheme for Light Load Power Reduction of Flyback Converter," in IEEE Transactions on Power Electronics, 2024 (通讯作者） (SCI, IF=6.7)
l Y. Wang, Xi Jiang, et al., "Symmetric and Staggered Terminal Layouts for Enhanced Current Balance and Reduced Parasitic Inductance in SiC Power Modules," in IEEE Transactions on Power Electronics, 2024 (通讯作者） (SCI, IF=6.7)
l Y. Wang, Xi Jiang, et al., "Innovative Reverse Current Coupling Layout of SiC Power Module for Parasitic Inductance Reduction," in IEEE Transactions on Electron Devices, vol. 71, no. 9, pp. 5609-5617, Sept. 2024 (通讯作者） (SCI, IF=3.1)
l Y. Wang, Xi Jiang, et al., "Online Junction Temperature Estimation for SiC MOSFETs Using Drain Voltage Falling Edge Time," in IEEE Transactions on Electron Devices, vol. 70, no. 10, pp. 5228-5235, Oct. 2023. (通讯作者） (SCI, IF=3.1)
l Z. Yan, S. Yuan, Xi Jiang, et al., "A Novel AlGaN/GaN-Based Schottky Barrier Diode With Partial P-GaN Cap Layer and Semicircular T-Anode for Temperature Sensors," in IEEE Transactions on Electron Devices, vol. 70, no. 10, pp. 5087-5091, Oct. 2023. (通讯作者） (SCI, IF=3.1)
l H. Yu, S. Liang, J. Wang, Xi Jiang, et al., "Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-Load Current Stress," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 10, no. 5, pp. 5070-5080, Oct. 2022.(SCI, IF=5.9)
l S. Yuan,Y. Li, M. Hou, Xi Jiang, et al., "Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT," in Micromachines, vol. 15, no. 73, 2024. (通讯作者）(SCI, IF=3.3)
l Xi Jiang, J. Wang, J. Chen, et al., "Investigation on Degradation of SiC MOSFET Under Surge Current Stress of Body Diode," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 8, no. 1, pp. 77-89, March 2020. (SCI, IF=5.9)
l Xi Jiang, J. Wang, H. Yu, et al., " Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction," in IEEE Transactions on Power Electronics, vol. 36, no. 4, pp. 3757-3768, April 2021.(SCI, IF=6.7)
l Xi Jiang, J. Wang, J. Chen, H. Yu, Z.Li, Z. John Shen, " Investigation on Degradation of SiC MOSFET under Accelerated Stress in PFC Converter ," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 4, pp. 4299-4310, Aug. 2021. (SCI, IF=5.9)
l Xi Jiang, J. Wang, J. Lu, J. Chen, X. Yin, Z. Li, C. Tu, J. Shen, “Failure Modes and Mechanism Analysis of SiC MOSFET under Short-Circuit Conditions”, in Microelectronics Reliability, vol. 88-90, pp. 593-597, 2018.(SCI, IF=1.6)
l J. Wang, Xi Jiang, Z. Li and Z. J. Shen, "Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch," in IEEE Transactions on Power Electronics, vol. 34, no. 3, pp. 2771-2780, March 2019. (通讯作者）(SCI, IF=6.7)
l J. Wang, Xi Jiang, "Review and analysis of SiC MOSFETs’ ruggedness and reliability," in IET Power Electronics, Vol. 13, Issue 3, pp.445–455, 2019. (通讯作者）(SCI, IF=2.3)
l Z. Li, X. Dai, Xi Jiang, et al. "A novel gate driver for Si/SiC hybrid switch for multi-objective optimization." in IET Power Electronics, Vol. 14, pp.422–431, 2020. (通讯作者）(SCI, IF=2.3)
l C. Deng, Z. Pang, Xi Jiang, et al., "A semi-circular T-shaped anode AlGaN/GaN Schottky barrier diode temperature sensor," 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia), Chengdu, China, 2024, pp. 1892-1897.(Best Paper Award)
专利
l江希,徐志佳,尹溶璐,袁嵩,何艳静,弓小武. 一种垂直导电型功率半导体器件双面压接封装结构[P]. ZL202210824287.4, 2022-07-13. （发明专利）
l江希,姜涛,袁嵩,张世杰,严兆恒,何艳静,弓小武. 三端电压控制器件及其制作方法[P]. 202210671019.3,2022-06-14. （发明专利）
l江希,欧阳润泽,王颖,袁嵩,弓小武. 一种轴对称的碳化硅功率模块封装结构[P]. ZL202311426912.0, 2024-06-25. （发明专利）
l江希,王颖,贾道勇,欧阳润泽,马年龙,袁嵩,弓小武. 一种SiC双面散热功率模块[P]. ZL202311684822.1, 2024-07-16. （发明专利）
l王俊,李宗鉴,江希. 一种半导体结构以其制作方法[P]. ZL106449729B,2019-04-30. （发明专利）
主要讲授课程
l功率半导体器件可靠性
l功率器件与功率集成
平台与团队信息
氮化镓、碳化硅半导体器件及模块封装测试技术平台（弓小武教授）
第三代半导体与集成电路研究中心
团队科研环境自由、氛围轻松融洽。也就是说欢迎电气、电子、自动化、物理等学科的爱游戏体育平台赞助意甲新人权益报考研究生！